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Datos del producto:
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| Número de parte: | TPN1R603PL, L1Q | Fabricante: | Semiconductor y almacenamiento de Toshiba |
|---|---|---|---|
| Descripción: | TRANSISTOR DEL MOSFET DEL PODER DE X35 PB-F | Categoría: | Transistores - FETs, MOSFETs - solos |
| Familia: | Transistores - FETs, MOSFETs - solos | Serie: | U-MOSIX-H |
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 10V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 80A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance |
| Package / Case | 8-PowerVDFN |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
Persona de Contacto: Darek
Teléfono: +8615017926135
