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Home > Products > Field Effect Transistor > VT6M1T2CR Field Effect Transistor Transistors FETs MOSFETs Arrays

VT6M1T2CR Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
VT6M1T2CR
Manufacturer:
Rohm Semiconductor
Description:
MOSFET N/P-CH 20V 0.1A VMT6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

VT6M1T2CR Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 100mA
Rds On (Max) @ Id, Vgs 3.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 7.1pF @ 10V
Power - Max 120mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Supplier Device Package VMT6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

VT6M1T2CR Packaging

Detection

VT6M1T2CR Field Effect Transistor Transistors FETs MOSFETs ArraysVT6M1T2CR Field Effect Transistor Transistors FETs MOSFETs ArraysVT6M1T2CR Field Effect Transistor Transistors FETs MOSFETs ArraysVT6M1T2CR Field Effect Transistor Transistors FETs MOSFETs Arrays

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