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Home > Products > Field Effect Transistor > BSM300D12P2E001 Field Effect Transistor Transistors FETs MOSFETs Arrays

BSM300D12P2E001 Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
BSM300D12P2E001
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 2N-CH 1200V 300A
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

BSM300D12P2E001 Specifications

Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 300A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V
Power - Max 1875W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

BSM300D12P2E001 Packaging

Detection

BSM300D12P2E001 Field Effect Transistor Transistors FETs MOSFETs ArraysBSM300D12P2E001 Field Effect Transistor Transistors FETs MOSFETs ArraysBSM300D12P2E001 Field Effect Transistor Transistors FETs MOSFETs ArraysBSM300D12P2E001 Field Effect Transistor Transistors FETs MOSFETs Arrays

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