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Home > products > Field Effect Transistor > UM6J1NTN Field Effect Transistor Transistors FETs MOSFETs Arrays

UM6J1NTN Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
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Specifications
Part Number:
UM6J1NTN
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 2P-CH 30V 0.2A UMT6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

UM6J1NTN Specifications

Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 200mA
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package UMT6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

UM6J1NTN Packaging

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UM6J1NTN Field Effect Transistor Transistors FETs MOSFETs ArraysUM6J1NTN Field Effect Transistor Transistors FETs MOSFETs ArraysUM6J1NTN Field Effect Transistor Transistors FETs MOSFETs ArraysUM6J1NTN Field Effect Transistor Transistors FETs MOSFETs Arrays

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