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Home > products > Field Effect Transistor > FDC6301N Field Effect Transistor Transistors FETs MOSFETs Arrays

FDC6301N Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
FDC6301N
Manufacturer:
Fairchild/ON Semiconductor
Description:
MOSFET 2N-CH 25V 0.22A SSOT6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

FDC6301N Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 220mA
Rds On (Max) @ Id, Vgs 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDC6301N Packaging

Detection

FDC6301N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6301N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6301N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6301N Field Effect Transistor Transistors FETs MOSFETs Arrays

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