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Home > Products > Field Effect Transistor > PMGD290XN,115 Field Effect Transistor Transistors FETs MOSFETs Arrays

PMGD290XN,115 Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
PMGD290XN,115
Manufacturer:
Nexperia USA Inc.
Description:
MOSFET 2N-CH 20V 0.86A 6TSSOP
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchMOS™
Introduction

PMGD290XN,115 Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 860mA
Rds On (Max) @ Id, Vgs 350 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 34pF @ 20V
Power - Max 410mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

PMGD290XN,115 Packaging

Detection

PMGD290XN,115 Field Effect Transistor Transistors FETs MOSFETs ArraysPMGD290XN,115 Field Effect Transistor Transistors FETs MOSFETs ArraysPMGD290XN,115 Field Effect Transistor Transistors FETs MOSFETs ArraysPMGD290XN,115 Field Effect Transistor Transistors FETs MOSFETs Arrays

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