PMGD290XN,115 Field Effect Transistor Transistors FETs MOSFETs Arrays
Specifications
Part Number:
PMGD290XN,115
Manufacturer:
Nexperia USA Inc.
Description:
MOSFET 2N-CH 20V 0.86A 6TSSOP
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchMOS™
Introduction
PMGD290XN,115 Specifications
Part Status | Active |
---|---|
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 860mA |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.72nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 34pF @ 20V |
Power - Max | 410mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | 6-TSSOP |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
PMGD290XN,115 Packaging
Detection
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Stock:
MOQ:
Negotiable