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FDG6335N Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
FDG6335N
Manufacturer:
Fairchild/ON Semiconductor
Description:
MOSFET 2N-CH 20V 0.7A SOT-363
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
PowerTrench®
Introduction

FDG6335N Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 700mA
Rds On (Max) @ Id, Vgs 300 mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDG6335N Packaging

Detection

FDG6335N Field Effect Transistor Transistors FETs MOSFETs ArraysFDG6335N Field Effect Transistor Transistors FETs MOSFETs ArraysFDG6335N Field Effect Transistor Transistors FETs MOSFETs ArraysFDG6335N Field Effect Transistor Transistors FETs MOSFETs Arrays

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