SI3552DV-T1-E3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Specifications
Part Number:
SI3552DV-T1-E3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N/P-CH 30V 6TSOP
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchFET®
Introduction
SI3552DV-T1-E3 Specifications
Part Status | Active |
---|---|
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.15W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SI3552DV-T1-E3 Packaging
Detection
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Stock:
MOQ:
Negotiable