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Home > products > Field Effect Transistor > NTHC5513T1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTHC5513T1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
NTHC5513T1G
Manufacturer:
ON Semiconductor
Description:
MOSFET N/P-CH 20V 1206A
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTHC5513T1G Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.2A
Rds On (Max) @ Id, Vgs 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package ChipFET™
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTHC5513T1G Packaging

Detection

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