SIA906EDJ-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Specifications
Part Number:
SIA906EDJ-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 20V 4.5A SC70-6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchFET®
Introduction
SIA906EDJ-T1-GE3 Specifications
Part Status | Active |
---|---|
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 3.9A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V |
Power - Max | 7.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SIA906EDJ-T1-GE3 Packaging
Detection
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Stock:
MOQ:
Negotiable