Send Message
Home > products > Field Effect Transistor > IRF7341TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF7341TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRF7341TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 55V 4.7A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF7341TRPBF Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 4.7A
Rds On (Max) @ Id, Vgs 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF7341TRPBF Packaging

Detection

IRF7341TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7341TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7341TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7341TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Send RFQ
Stock:
MOQ:
Negotiable