IRF8313TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRF8313TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 9.7A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction
IRF8313TRPBF Specifications
| Part Status | Not For New Designs |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A |
| Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
IRF8313TRPBF Packaging
Detection
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Stock:
MOQ:
Negotiable