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IRF7106 Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRF7106
Manufacturer:
Infineon Technologies
Description:
MOSFET N/P-CH 20V 3A/2.5A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF7106 Specifications

Part Status Obsolete
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A, 2.5A
Rds On (Max) @ Id, Vgs 125 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V
Power - Max 2W
Operating Temperature -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF7106 Packaging

Detection

IRF7106 Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7106 Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7106 Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7106 Field Effect Transistor Transistors FETs MOSFETs Arrays

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