SI5908DC-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
SI5908DC-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 20V 4.4A 1206-8
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchFET®
Introduction
SI5908DC-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SI5908DC-T1-GE3 Packaging
Detection
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Stock:
MOQ:
Negotiable