SI5517DU-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Specifications
Part Number:
SI5517DU-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N/P-CH 20V 6A CHIPFET
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchFET®
Introduction
SI5517DU-T1-GE3 Specifications
Part Status | Active |
---|---|
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
Power - Max | 8.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® ChipFET™ Dual |
Supplier Device Package | PowerPAK® ChipFet Dual |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SI5517DU-T1-GE3 Packaging
Detection
Send RFQ
Stock:
MOQ:
Negotiable