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Home > products > Field Effect Transistor > IRF7351TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF7351TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRF7351TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 60V 8A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF7351TRPBF Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 17.8 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 30V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF7351TRPBF Packaging

Detection

IRF7351TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7351TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7351TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7351TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

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