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PMGD280UN,115 Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
PMGD280UN,115
Manufacturer:
Nexperia USA Inc.
Description:
MOSFET 2N-CH 20V 0.87A 6TSSOP
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchMOS™
Introduction

PMGD280UN,115 Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 870mA
Rds On (Max) @ Id, Vgs 340 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 20V
Power - Max 400mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

PMGD280UN,115 Packaging

Detection

PMGD280UN,115 Field Effect Transistor Transistors FETs MOSFETs ArraysPMGD280UN,115 Field Effect Transistor Transistors FETs MOSFETs ArraysPMGD280UN,115 Field Effect Transistor Transistors FETs MOSFETs ArraysPMGD280UN,115 Field Effect Transistor Transistors FETs MOSFETs Arrays

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