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Home > products > Field Effect Transistor > NTJD4152PT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTJD4152PT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
NTJD4152PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2P-CH 20V 0.88A SOT-363
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTJD4152PT1G Specifications

Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 880mA
Rds On (Max) @ Id, Vgs 260 mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 20V
Power - Max 272mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTJD4152PT1G Packaging

Detection

NTJD4152PT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD4152PT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD4152PT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD4152PT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

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