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Home > products > Field Effect Transistor > NTZD5110NT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTZD5110NT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
NTZD5110NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 60V 0.294A SOT563
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTZD5110NT1G Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 294mA
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 24.5pF @ 20V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTZD5110NT1G Packaging

Detection

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