PMDXB600UNE Field Effect Transistor Transistors FETs MOSFETs Arrays
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
PMDXB600UNE
Manufacturer:
Nexperia USA Inc.
Description:
MOSFET 2N-CH 20V 0.6A 6DFN
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchFET®
Introduction
PMDXB600UNE Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 600mA |
| Rds On (Max) @ Id, Vgs | 620 mOhm @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V |
| Power - Max | 265mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Supplier Device Package | 6-DFN (1.1x1) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
PMDXB600UNE Packaging
Detection
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Stock:
MOQ:
Negotiable