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Home > products > Field Effect Transistor > NTJD5121NT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTJD5121NT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
NTJD5121NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 60V 0.295A SOT363
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTJD5121NT1G Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 295mA
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTJD5121NT1G Packaging

Detection

NTJD5121NT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD5121NT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD5121NT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD5121NT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

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