SI5935CDC-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Specifications
Part Number:
SI5935CDC-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2P-CH 20V 4A 1206-8
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchFET®
Introduction
SI5935CDC-T1-GE3 Specifications
Part Status | Active |
---|---|
FET Type | 2 P-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET™ |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SI5935CDC-T1-GE3 Packaging
Detection
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Stock:
MOQ:
Negotiable