SI1922EDH-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
SI1922EDH-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 20V 1.3A SOT-363
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
TrenchFET®
Introduction
SI1922EDH-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Rds On (Max) @ Id, Vgs | 198 mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 (SOT-363) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SI1922EDH-T1-GE3 Packaging
Detection
Send RFQ
Stock:
MOQ:
Negotiable