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Home > products > Field Effect Transistor > NTGD4167CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTGD4167CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
NTGD4167CT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET N/P-CH 30V 6-TSOP
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTGD4167CT1G Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.6A, 1.9A
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTGD4167CT1G Packaging

Detection

NTGD4167CT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTGD4167CT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTGD4167CT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTGD4167CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

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