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Home > products > Field Effect Transistor > FDG6322C Field Effect Transistor Transistors FETs MOSFETs Arrays

FDG6322C Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
FDG6322C
Manufacturer:
Fairchild/ON Semiconductor
Description:
MOSFET N/P-CH 25V SC70-6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

FDG6322C Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 220mA, 410mA
Rds On (Max) @ Id, Vgs 4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDG6322C Packaging

Detection

FDG6322C Field Effect Transistor Transistors FETs MOSFETs ArraysFDG6322C Field Effect Transistor Transistors FETs MOSFETs ArraysFDG6322C Field Effect Transistor Transistors FETs MOSFETs ArraysFDG6322C Field Effect Transistor Transistors FETs MOSFETs Arrays

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