Send Message
Home > products > Field Effect Transistor > FDC3601N Field Effect Transistor Transistors FETs MOSFETs Arrays

FDC3601N Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
FDC3601N
Manufacturer:
Fairchild/ON Semiconductor
Description:
MOSFET 2N-CH 100V 1A SSOT-6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
PowerTrench®
Introduction

FDC3601N Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A
Rds On (Max) @ Id, Vgs 500 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 153pF @ 50V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDC3601N Packaging

Detection

FDC3601N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC3601N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC3601N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC3601N Field Effect Transistor Transistors FETs MOSFETs Arrays

Send RFQ
Stock:
MOQ:
Negotiable