NTMD4N03R2G Field Effect Transistor Transistors FETs MOSFETs Arrays
Specifications
Part Number:
NTMD4N03R2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 30V 4A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction
NTMD4N03R2G Specifications
Part Status | Active |
---|---|
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 20V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
NTMD4N03R2G Packaging
Detection
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Stock:
MOQ:
Negotiable