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Home > products > Field Effect Transistor > NTMD4N03R2G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTMD4N03R2G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
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Specifications
Part Number:
NTMD4N03R2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 30V 4A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTMD4N03R2G Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 60 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 20V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTMD4N03R2G Packaging

Detection

NTMD4N03R2G Field Effect Transistor Transistors FETs MOSFETs ArraysNTMD4N03R2G Field Effect Transistor Transistors FETs MOSFETs ArraysNTMD4N03R2G Field Effect Transistor Transistors FETs MOSFETs ArraysNTMD4N03R2G Field Effect Transistor Transistors FETs MOSFETs Arrays

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