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FDC6561AN Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
FDC6561AN
Manufacturer:
Fairchild/ON Semiconductor
Description:
MOSFET 2N-CH 30V 2.5A SSOT6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
PowerTrench®
Introduction

FDC6561AN Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 95 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDC6561AN Packaging

Detection

FDC6561AN Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6561AN Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6561AN Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6561AN Field Effect Transistor Transistors FETs MOSFETs Arrays

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