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Home > products > Field Effect Transistor > NTMD6P02R2G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTMD6P02R2G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
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Specifications
Part Number:
NTMD6P02R2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2P-CH 20V 4.8A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTMD6P02R2G Specifications

Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.8A
Rds On (Max) @ Id, Vgs 33 mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 16V
Power - Max 750mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTMD6P02R2G Packaging

Detection

NTMD6P02R2G Field Effect Transistor Transistors FETs MOSFETs ArraysNTMD6P02R2G Field Effect Transistor Transistors FETs MOSFETs ArraysNTMD6P02R2G Field Effect Transistor Transistors FETs MOSFETs ArraysNTMD6P02R2G Field Effect Transistor Transistors FETs MOSFETs Arrays

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