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Home > products > Field Effect Transistor > CSD86330Q3D Field Effect Transistor Transistors FETs MOSFETs Arrays

CSD86330Q3D Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
CSD86330Q3D
Manufacturer:
Texas Instruments
Description:
MOSFET 2N-CH 25V 20A 8SON
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
NexFET™
Introduction

CSD86330Q3D Specifications

Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 9.6 mOhm @ 14A, 8V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 12.5V
Power - Max 6W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerLDFN
Supplier Device Package 8-LSON (5x6)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

CSD86330Q3D Packaging

Detection

CSD86330Q3D Field Effect Transistor Transistors FETs MOSFETs ArraysCSD86330Q3D Field Effect Transistor Transistors FETs MOSFETs ArraysCSD86330Q3D Field Effect Transistor Transistors FETs MOSFETs ArraysCSD86330Q3D Field Effect Transistor Transistors FETs MOSFETs Arrays

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