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Home > Products > IGBT Power Module > HGT1S7N60A4DS IGBT Power Module Transistors IGBTs Single

HGT1S7N60A4DS IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
HGT1S7N60A4DS
Manufacturer:
Fairchild/ON Semiconductor
Description:
IGBT 600V 34A 125W TO263AB
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

HGT1S7N60A4DS Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 34A
Current - Collector Pulsed (Icm) 56A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Power - Max 125W
Switching Energy 55µJ (on), 60µJ (off)
Input Type Standard
Gate Charge 37nC
Td (on/off) @ 25°C 11ns/100ns
Test Condition 390V, 7A, 25 Ohm, 15V
Reverse Recovery Time (trr) 34ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

HGT1S7N60A4DS Packaging

Detection

HGT1S7N60A4DS IGBT Power Module Transistors IGBTs SingleHGT1S7N60A4DS IGBT Power Module Transistors IGBTs SingleHGT1S7N60A4DS IGBT Power Module Transistors IGBTs SingleHGT1S7N60A4DS IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable