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Home > Products > IGBT Power Module > HGT1S12N60A4S9A IGBT Power Module Transistors IGBTs Single

HGT1S12N60A4S9A IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
HGT1S12N60A4S9A
Manufacturer:
Fairchild/ON Semiconductor
Description:
IGBT 600V 54A 167W TO263AB
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

HGT1S12N60A4S9A Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 54A
Current - Collector Pulsed (Icm) 96A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Power - Max 167W
Switching Energy 55µJ (on), 50µJ (off)
Input Type Standard
Gate Charge 78nC
Td (on/off) @ 25°C 17ns/96ns
Test Condition 390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

HGT1S12N60A4S9A Packaging

Detection

HGT1S12N60A4S9A IGBT Power Module Transistors IGBTs SingleHGT1S12N60A4S9A IGBT Power Module Transistors IGBTs SingleHGT1S12N60A4S9A IGBT Power Module Transistors IGBTs SingleHGT1S12N60A4S9A IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable