Send Message
Home > Products > IGBT Power Module > IRG7CH35UEF IGBT Power Module Transistors IGBTs Single

IRG7CH35UEF IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRG7CH35UEF
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V ULTRA FAST DIE
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

IRG7CH35UEF Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) -
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 5A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge 85nC
Td (on/off) @ 25°C 30ns/160ns
Test Condition 600V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRG7CH35UEF Packaging

Detection

IRG7CH35UEF IGBT Power Module Transistors IGBTs SingleIRG7CH35UEF IGBT Power Module Transistors IGBTs SingleIRG7CH35UEF IGBT Power Module Transistors IGBTs SingleIRG7CH35UEF IGBT Power Module Transistors IGBTs Single

Send RFQ
Stock:
MOQ:
Negotiable