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Home > products > IGBT Power Module > IRG8B08N120KDPBF IGBT Power Module Transistors IGBTs Single

IRG8B08N120KDPBF IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRG8B08N120KDPBF
Manufacturer:
Infineon Technologies
Description:
DIODE 1200V 8A TO-220
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

IRG8B08N120KDPBF Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 15A
Current - Collector Pulsed (Icm) 15A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Power - Max 89W
Switching Energy 300µJ (on), 300µJ (off)
Input Type Standard
Gate Charge 45nC
Td (on/off) @ 25°C 20ns/160ns
Test Condition 600V, 5A, 47 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRG8B08N120KDPBF Packaging

Detection

IRG8B08N120KDPBF IGBT Power Module Transistors IGBTs SingleIRG8B08N120KDPBF IGBT Power Module Transistors IGBTs SingleIRG8B08N120KDPBF IGBT Power Module Transistors IGBTs SingleIRG8B08N120KDPBF IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable