GT60N321(Q) IGBT Power Module Transistors IGBTs Single
Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
GT60N321(Q)
Manufacturer:
Toshiba Semiconductor And Storage
Description:
IGBT 1000V 60A 170W TO3P LH
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction
GT60N321(Q) Specifications
| Part Status | Obsolete |
|---|---|
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 170W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 330ns/700ns |
| Test Condition | - |
| Reverse Recovery Time (trr) | 2.5µs |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(LH) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
GT60N321(Q) Packaging
Detection
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Stock:
MOQ:
Negotiable