GT10J312(Q) IGBT Power Module Transistors IGBTs Single
Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
GT10J312(Q)
Manufacturer:
Toshiba Semiconductor And Storage
Description:
IGBT 600V 10A 60W TO220SM
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction
GT10J312(Q) Specifications
| Part Status | Obsolete |
|---|---|
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 10A |
| Current - Collector Pulsed (Icm) | 20A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 60W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 400ns/400ns |
| Test Condition | 300V, 10A, 100 Ohm, 15V |
| Reverse Recovery Time (trr) | 200ns |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-220SM |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
GT10J312(Q) Packaging
Detection
Send RFQ
Stock:
MOQ:
Negotiable