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Home > Products > IGBT Power Module > GT50J121(Q) IGBT Power Module Transistors IGBTs Single

GT50J121(Q) IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
GT50J121(Q)
Manufacturer:
Toshiba Semiconductor And Storage
Description:
IGBT 600V 50A 240W TO3P LH
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

GT50J121(Q) Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Power - Max 240W
Switching Energy 1.3mJ (on), 1.34mJ (off)
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 90ns/300ns
Test Condition 300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PL
Supplier Device Package TO-3P(LH)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

GT50J121(Q) Packaging

Detection

GT50J121(Q) IGBT Power Module Transistors IGBTs SingleGT50J121(Q) IGBT Power Module Transistors IGBTs SingleGT50J121(Q) IGBT Power Module Transistors IGBTs SingleGT50J121(Q) IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable