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Home > Products > IGBT Power Module > GT8G133(TE12L,Q) IGBT Power Module Transistors IGBTs Single

GT8G133(TE12L,Q) IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
GT8G133(TE12L,Q)
Manufacturer:
Toshiba Semiconductor And Storage
Description:
IGBT 400V 600MW 8TSSOP
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

GT8G133(TE12L,Q) Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 150A
Vce(on) (Max) @ Vge, Ic 2.9V @ 4V, 150A
Power - Max 600mW
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 1.7µs/2µs
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

GT8G133(TE12L,Q) Packaging

Detection

GT8G133(TE12L,Q) IGBT Power Module Transistors IGBTs SingleGT8G133(TE12L,Q) IGBT Power Module Transistors IGBTs SingleGT8G133(TE12L,Q) IGBT Power Module Transistors IGBTs SingleGT8G133(TE12L,Q) IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable