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Home > Products > IGBT Power Module > GT10G131(TE12L,Q) IGBT Power Module Transistors IGBTs Single

GT10G131(TE12L,Q) IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
GT10G131(TE12L,Q)
Manufacturer:
Toshiba Semiconductor And Storage
Description:
IGBT 400V 1W 8-SOIC
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

GT10G131(TE12L,Q) Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 2.3V @ 4V, 200A
Power - Max 1W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 3.1µs/2µs
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-SOP (5.5x6.0)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

GT10G131(TE12L,Q) Packaging

Detection

GT10G131(TE12L,Q) IGBT Power Module Transistors IGBTs SingleGT10G131(TE12L,Q) IGBT Power Module Transistors IGBTs SingleGT10G131(TE12L,Q) IGBT Power Module Transistors IGBTs SingleGT10G131(TE12L,Q) IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable