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Home > Products > IGBT Power Module > APT35GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

APT35GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
APT35GP120B2DQ2G
Manufacturer:
Microsemi Corporation
Description:
IGBT 1200V 96A 543W TMAX
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Series:
POWER MOS 7®
Introduction

APT35GP120B2DQ2G Specifications

Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 96A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
Power - Max 543W
Switching Energy 750µJ (on), 680µJ (off)
Input Type Standard
Gate Charge 150nC
Td (on/off) @ 25°C 16ns/95ns
Test Condition 600V, 35A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT35GP120B2DQ2G Packaging

Detection

APT35GP120B2DQ2G IGBT Power Module Transistors IGBTs SingleAPT35GP120B2DQ2G IGBT Power Module Transistors IGBTs SingleAPT35GP120B2DQ2G IGBT Power Module Transistors IGBTs SingleAPT35GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable