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Home > Products > IGBT Power Module > RGTH00TS65GC11 IGBT Power Module Transistors IGBTs Single

RGTH00TS65GC11 IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
RGTH00TS65GC11
Manufacturer:
Rohm Semiconductor
Description:
IGBT 650V 85A 277W TO-247N
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

RGTH00TS65GC11 Specifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 85A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Power - Max 277W
Switching Energy -
Input Type Standard
Gate Charge 94nC
Td (on/off) @ 25°C 39ns/143ns
Test Condition 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

RGTH00TS65GC11 Packaging

Detection

RGTH00TS65GC11 IGBT Power Module Transistors IGBTs SingleRGTH00TS65GC11 IGBT Power Module Transistors IGBTs SingleRGTH00TS65GC11 IGBT Power Module Transistors IGBTs SingleRGTH00TS65GC11 IGBT Power Module Transistors IGBTs Single

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MOQ:
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