Send Message
Home > Products > IGBT Power Module > IXGT32N170 T&R IGBT Power Module Transistors IGBTs Single

IXGT32N170 T&R IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IXGT32N170 T&R
Manufacturer:
IXYS
Description:
IGBT 1700V 75A 350W TO268
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

IXGT32N170 T&R Specifications

Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 75A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 32A
Power - Max 350W
Switching Energy 11mJ (off)
Input Type Standard
Gate Charge 155nC
Td (on/off) @ 25°C 45ns/270ns
Test Condition 1020V, 32A, 2.7 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IXGT32N170 T&R Packaging

Detection

IXGT32N170 T&R IGBT Power Module Transistors IGBTs SingleIXGT32N170 T&R IGBT Power Module Transistors IGBTs SingleIXGT32N170 T&R IGBT Power Module Transistors IGBTs SingleIXGT32N170 T&R IGBT Power Module Transistors IGBTs Single

Send RFQ
Stock:
MOQ:
Negotiable