APT25GP120BDQ1G IGBT Power Module Transistors IGBTs Single
Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
APT25GP120BDQ1G
Manufacturer:
Microsemi Corporation
Description:
IGBT 1200V 69A 417W TO247
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Series:
POWER MOS 7®
Introduction
APT25GP120BDQ1G Specifications
| Part Status | Active |
|---|---|
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 69A |
| Current - Collector Pulsed (Icm) | 90A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
| Power - Max | 417W |
| Switching Energy | 500µJ (on), 440µJ (off) |
| Input Type | Standard |
| Gate Charge | 110nC |
| Td (on/off) @ 25°C | 12ns/70ns |
| Test Condition | 600V, 25A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
APT25GP120BDQ1G Packaging
Detection
Send RFQ
Stock:
MOQ:
Negotiable