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Home > Products > IGBT Power Module > HGTD1N120BNS9A IGBT Power Module Transistors IGBTs Single

HGTD1N120BNS9A IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
HGTD1N120BNS9A
Manufacturer:
Fairchild/ON Semiconductor
Description:
IGBT 1200V 5.3A 60W TO252AA
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

HGTD1N120BNS9A Specifications

Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 5.3A
Current - Collector Pulsed (Icm) 6A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A
Power - Max 60W
Switching Energy 70µJ (on), 90µJ (off)
Input Type Standard
Gate Charge 14nC
Td (on/off) @ 25°C 15ns/67ns
Test Condition 960V, 1A, 82 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

HGTD1N120BNS9A Packaging

Detection

HGTD1N120BNS9A IGBT Power Module Transistors IGBTs SingleHGTD1N120BNS9A IGBT Power Module Transistors IGBTs SingleHGTD1N120BNS9A IGBT Power Module Transistors IGBTs SingleHGTD1N120BNS9A IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
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