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Home > Products > IGBT Power Module > IRG4PH50S-EPBF IGBT Power Module Transistors IGBTs Single

IRG4PH50S-EPBF IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRG4PH50S-EPBF
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 57A 200W TO247AD
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

IRG4PH50S-EPBF Specifications

Part Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 57A
Current - Collector Pulsed (Icm) 114A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Power - Max 200W
Switching Energy 1.8mJ (on), 19.6mJ (off)
Input Type Standard
Gate Charge 167nC
Td (on/off) @ 25°C 32ns/845ns
Test Condition 960V, 33A, 5 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRG4PH50S-EPBF Packaging

Detection

IRG4PH50S-EPBF IGBT Power Module Transistors IGBTs SingleIRG4PH50S-EPBF IGBT Power Module Transistors IGBTs SingleIRG4PH50S-EPBF IGBT Power Module Transistors IGBTs SingleIRG4PH50S-EPBF IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
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