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Home > Products > IGBT Power Module > IRG7PH30K10PBF IGBT Power Module Transistors IGBTs Single

IRG7PH30K10PBF IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRG7PH30K10PBF
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 33A 210W TO247AC
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

IRG7PH30K10PBF Specifications

Part Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 33A
Current - Collector Pulsed (Icm) 27A
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 9A
Power - Max 210W
Switching Energy 530µJ (on), 380µJ (off)
Input Type Standard
Gate Charge 45nC
Td (on/off) @ 25°C 14ns/110ns
Test Condition 600V, 9A, 22 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRG7PH30K10PBF Packaging

Detection

IRG7PH30K10PBF IGBT Power Module Transistors IGBTs SingleIRG7PH30K10PBF IGBT Power Module Transistors IGBTs SingleIRG7PH30K10PBF IGBT Power Module Transistors IGBTs SingleIRG7PH30K10PBF IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable