Send Message
Home > Products > IGBT Power Module > STGW30M65DF2 IGBT Power Module Transistors IGBTs Single

STGW30M65DF2 IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
STGW30M65DF2
Manufacturer:
STMicroelectronics
Description:
TRENCH GATE FIELD-STOP IGBT M SE
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

STGW30M65DF2 Specifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 60A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 258W
Switching Energy 300µJ (on), 960µJ (off)
Input Type Standard
Gate Charge 80nC
Td (on/off) @ 25°C 31.6ns/115ns
Test Condition 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 140ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

STGW30M65DF2 Packaging

Detection

STGW30M65DF2 IGBT Power Module Transistors IGBTs SingleSTGW30M65DF2 IGBT Power Module Transistors IGBTs SingleSTGW30M65DF2 IGBT Power Module Transistors IGBTs SingleSTGW30M65DF2 IGBT Power Module Transistors IGBTs Single

Send RFQ
Stock:
MOQ:
Negotiable