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APT65GP60B2G IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
APT65GP60B2G
Manufacturer:
Microsemi Corporation
Description:
IGBT 600V 100A 833W TMAX
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Series:
POWER MOS 7®
Introduction

APT65GP60B2G Specifications

Part Status Not For New Designs
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 100A
Current - Collector Pulsed (Icm) 250A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Power - Max 833W
Switching Energy 605µJ (on), 896µJ (off)
Input Type Standard
Gate Charge 210nC
Td (on/off) @ 25°C 30ns/91ns
Test Condition 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT65GP60B2G Packaging

Detection

APT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs SingleAPT65GP60B2G IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
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