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Home > Products > IGBT Power Module > IXYH100N65C3 IGBT Power Module Transistors IGBTs Single

IXYH100N65C3 IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IXYH100N65C3
Manufacturer:
IXYS
Description:
IGBT 650V 200A 830W TO247
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Series:
GenX3™, XPT™
Introduction

IXYH100N65C3 Specifications

Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 200A
Current - Collector Pulsed (Icm) 420A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 70A
Power - Max 830W
Switching Energy 2.15mJ (on), 840µJ (off)
Input Type Standard
Gate Charge 164nC
Td (on/off) @ 25°C 28ns/106ns
Test Condition 400V, 50A, 3 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 (IXYH)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IXYH100N65C3 Packaging

Detection

IXYH100N65C3 IGBT Power Module Transistors IGBTs SingleIXYH100N65C3 IGBT Power Module Transistors IGBTs SingleIXYH100N65C3 IGBT Power Module Transistors IGBTs SingleIXYH100N65C3 IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable