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Home > Products > IGBT Power Module > APT50GN60BDQ2G IGBT Power Module Transistors IGBTs Single

APT50GN60BDQ2G IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
APT50GN60BDQ2G
Manufacturer:
Microsemi Corporation
Description:
IGBT 600V 107A 366W TO247
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

APT50GN60BDQ2G Specifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 107A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 50A
Power - Max 366W
Switching Energy 1185µJ (on), 1565µJ (off)
Input Type Standard
Gate Charge 325nC
Td (on/off) @ 25°C 20ns/230ns
Test Condition 400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT50GN60BDQ2G Packaging

Detection

APT50GN60BDQ2G IGBT Power Module Transistors IGBTs SingleAPT50GN60BDQ2G IGBT Power Module Transistors IGBTs SingleAPT50GN60BDQ2G IGBT Power Module Transistors IGBTs SingleAPT50GN60BDQ2G IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
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